Multi terminal capacitor within input output path of semiconductor package interconnect

ABSTRACT

A semiconductor package, e.g., wafer, chip, interposer, etc., includes a multi terminal capacitor within an input output (IO) path. The multi terminal capacitor is electrically attached directly upon a first IO contact of the semiconductor package. There is no inductance between the multi terminal capacitor and a interconnect that electrically connects the first IO contact with a second IO contact of a second semiconductor package and no inductance between the multi terminal capacitor and the first IO contact. The multi terminal capacitor may serve as a power source to cycle the turning on and off of the various circuits within a semiconductor chip associated with the semiconductor package. Because the distance between the multi terminal capacitor and semiconductor chip is reduced, inductance within the system is resultantly reduced. The multi terminal capacitor may be a decoupling capacitor that decouples one part of semiconductor chip from another part of semiconductor chip.

FIELD

Embodiments of invention generally relate to semiconductor devices andsemiconductor device fabrication methods. More particularly, embodimentsrelate to a multi terminal capacitor within an input output (I/O) pathof a semiconductor package interconnect.

BACKGROUND

As clock speeds and the circuit densities of semiconductor chips haveincreased, degraded electrical performance of the semiconductor chipshas been seen due to high frequency noise and inductance. One such causeof noise and inductance is related to the rapid turning on and off ofcircuits within the semiconductor chip. Prior semiconductor chips mayhave utilized the power supply of the associated electronic device as apower source to cycle the turning on and off of the various circuitswithin the chip. Because the distance between the power supply andsemiconductor chip is usually orders of magnitude larger than thelengths of the circuits within the semiconductor chip, a largeinductance was introduced into the system. Likewise, the turning on andoff of an increasingly large number of circuits within the semiconductorchip also results in an increasing amount of noise. Therefore, there isa need to reduce inductance and noise within semiconductor chips.

SUMMARY

In an embodiment of the present invention, a semiconductor devicefabrication method is presented. The method includes attaching a multiterminal capacitor to neighboring IO contacts of a semiconductor chipcarrier such that a first terminal contacts a first IO contact and asecond terminal contacts a second IO contact. The method furtherincludes interconnecting the semiconductor chip carrier with a carrierinterposer with solder interconnects such that a first solderinterconnect directly contacts the first terminal and the first IOcontact and a second solder interconnect directly contacts the secondterminal and the second IO contact.

In another embodiment a semiconductor device fabrication method ispresented. The method includes attaching a multi terminal capacitor toneighboring IO contacts of a carrier interposer such that a firstterminal contacts a first IO contact and a second terminal contacts asecond IO contact. The method further includes interconnecting thecarrier interposer with a semiconductor chip carrier with solderinterconnects such that a first solder interconnect directly contactsthe first terminal and the first IO contact and a second solderinterconnect directly contacts the second terminal and the second IOcontact.

In yet another embodiment of the present invention, a semiconductordevice fabrication method is presented. The method includes electricallyconnecting a semiconductor chip to a chip carrier with first inputoutput (IO) interconnects within a first interconnect level. The methodfurther includes electrically connecting a carrier interposer to thechip carrier with second IO interconnects within a second interconnectlevel. The method further includes electrically connecting a multiterminal capacitor within the second interconnect level such that thereis no inductance between a first solder interconnect within the secondinterconnect level and a first terminal of the multi terminal capacitorand between the first solder interconnect, a first IO contact of thechip carrier, and a first IO contact of the carrier interposer.

These and other embodiments, features, aspects, and advantages willbecome better understood with reference to the following description,appended claims, and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention are attained and can be understood in detail, a moreparticular description of the invention, briefly summarized above, maybe had by reference to the embodiments thereof which are illustrated inthe appended drawings.

It is to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 depicts an exemplary semiconductor package that may utilizevarious embodiments of the present invention.

FIG. 2 depicts multiple exemplary semiconductor packages that mayutilize various embodiments of the present invention.

FIG. 3-FIG. 5 depict cross section views of exemplary multi terminalcapacitors within an input output (IO) path of a multi semiconductorpackage interconnect, according to various embodiments of the presentinvention.

FIG. 6-FIG. 8 depict normal views of exemplary multi terminal capacitorsupon a semiconductor package, according to various embodiments of thepresent invention.

FIG. 9 depicts a normal view of an exemplary semiconductor packagesolder mask and exposed contacts, according to various embodiments ofthe present invention.

FIG. 10 depicts a normal view of an exemplary multi terminal capacitorupon semiconductor package exposed contacts, according to variousembodiments of the present invention.

FIG. 11 depicts a normal view of an exemplary semiconductor packagesolder mask and exposed contacts, according to various embodiments ofthe present invention.

FIG. 12 depicts a normal view of exemplary multi terminal capacitorsupon semiconductor package exposed contacts, according to variousembodiments of the present invention.

FIG. 13 depicts a normal view of an exemplary semiconductor packagesolder mask and exposed contacts, according to various embodiments ofthe present invention.

FIG. 14 depicts a normal view of an exemplary multi terminal capacitorupon semiconductor package exposed contacts, according to variousembodiments of the present invention.

FIG. 15 depicts a cross section view of an exemplary semiconductorpackage solder mask and exposed contacts, according to variousembodiments of the present invention.

FIG. 16 depicts a cross section view of an exemplary multi terminalcapacitor upon semiconductor package exposed contacts, according tovarious embodiments of the present invention.

FIG. 17 depicts a cross section view of an exemplary semiconductor chipsystem of an electronic device which includes a multi terminal capacitorwithin an IO path of a multi semiconductor package interconnect,according to various embodiments of the present invention.

FIG. 18-FIG. 21 depict exemplary semiconductor package fabricationmethods, according to embodiments of the invention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only exemplaryembodiments of the invention. In the drawings, like numbering representslike elements.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it can be understood that the disclosed embodiments aremerely illustrative of the claimed structures or methods that may beembodied in various forms. These exemplary embodiments are provided sothat this disclosure will be thorough and complete and will fully conveythe scope of this invention to those skilled in the art. In thedescription, details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the presented embodiments.

Embodiments of invention generally relate to one or more semiconductorpackages, such as a semiconductor wafer, semiconductor chip, interposer,etc., that include one or more multi terminal capacitors within an inputoutput (IO) path of a semiconductor package interconnect. Moreparticularly, the multi terminal capacitor is electrically attacheddirectly upon neighboring IO contacts of the semiconductor package suchthat there is no inductance at least between the multi terminalcapacitor and the interconnect that electrically connects an IO contactof a first semiconductor package and an IO contact of a secondsemiconductor package. The multi terminal capacitor may serve as a powersource to cycle the turning on and off of the various circuits within asemiconductor chip associated with the semiconductor package. Becausethe distance between the multi terminal capacitor and semiconductor chipis reduced, inductance within the system is resultantly reduced. Inaddition, the multi terminal capacitor may be a decoupling capacitorthat decouples one part of semiconductor chip from another part ofsemiconductor chip so as to reduce noise within the system.

Referring now to the FIGs, wherein like components are labeled with likenumerals, exemplary fabrication steps and corresponding structure inaccordance with embodiments of the present invention are shown, and willnow be described in greater detail below. It should be noted that someof the FIGs depict cross section views. Furthermore, it should be notedthat while this description may refer to components in the singulartense, more than one component may be depicted throughout the figures ora real world implementation of the embodiments of the present invention.The specific number of components depicted in the figures and theparticular view was chosen to best illustrate the various embodimentsdescribed herein.

FIG. 1 depicts an exemplary semiconductor package 20 that may utilizevarious embodiments of the present invention. In embodiments,semiconductor package 20 is a data handling device such as asemiconductor chip, integrated circuit, processor, coprocessor,application specific integrated circuit (ASIC), field programmable gatearray (FPGA), or the like. In some embodiments, semiconductor package 20may take its raw form as a pre-diced wafer from which multiplesemiconductor packages 20 are fabricated and subsequently diced intoindividual semiconductor packages 20. Semiconductor package 20 includesa substrate 10, one or more dielectric layers 12, and IO contact 13. Inthe example depicted in FIG. 1, one or more dielectric layers 12 areformed upon a semiconductor substrate 12. For example, as is known inthe art, various front end of the line (FEOL), middle end of the line(MEOL), and back end of the line (BEOL) fabrication processes may formmicro-electronic devices within or upon substrate 10. The substrate 10may be, for example, silicon or other known substrates for the formationof semiconductor package 20. A metal, or otherwise electricallyconductive, interconnect 16 and wiring line 15 may be formed in the oneor more dielectric layers 12 using conventional damascene and depositionprocesses. The interconnect 16 is generally electrically connected toone or more micro-devices, such as a transistor. A metal, or otherwiseelectrically conductive, inter dielectric contact 14 may be formed inthe dielectric layers 12 and is in contact with wiring line 15.Likewise, a metal, or otherwise electrically conductive, IO contact 13may be formed upon inter dielectric contact 14 and upon dielectriclayers 12 to service as a interconnect structure to electrically connectsemiconductor package 20 to another electronic device or semiconductorpackage.

FIG. 2 depicts exemplary semiconductor package 20 and semiconductorpackage 30 that may utilize various embodiments of the presentinvention. In the present multi semiconductor package embodiment,semiconductor package 20 is in the form of an individual processingdevice, as opposed to the raw wafer, and is denoted as a semiconductorchip “C.” Semiconductor package 30 is generally an interposer, carrier,or the like and is denoted as an interposer “I.”

Semiconductor package 30 may be an organic carrier or a ceramic carrierand may be generally connected to a first interconnect level andprovides mechanical support for semiconductor package 20 and electricalpaths from the upper surface of semiconductor package 30 to the bottomside of semiconductor package 30. The term “first interconnect level” isutilized herein to denote a first IO connection interface between thedata processing semiconductor package 20 and the semiconductor package30. In a particular embodiment, the upper side of semiconductor package30 is electrically connected to semiconductor package 20. The bottomside of semiconductor package 30 may be electrically connected to anelectronic device mother board or a mother board interposer such as ariser board, daughter board, etc. The side of semiconductor package 30opposing semiconductor package 20 may be generally connected to a secondinterconnect level. The term “second interconnect level” is utilizedherein to denote a second IO connection interface from the semiconductorpackage 30 to another electronic device component.

Semiconductor package 30 may include a substrate 31, IO contact 33,inter substrate contact 35, wiring line 37, inter substrate contact 39,and IO contact 41. Substrate 31 may be an organic, ceramic, or otherknown carrier material within which electrical pathways may befabricated and upon which IO contacts may be fabricated. The IO contact33, inter substrate contact 35, wiring line 37, inter substrate contact39, and IO contact 41 may generally form electrical paths from the topsurface of semiconductor package 30 to the bottom surface ofsemiconductor package 30.

In embodiments of the invention, solder mask 36 and solder 34 may beconnected semiconductor package 20 or semiconductor package 30. Soldermask 36 is a layer of dielectric (e.g. polymer, etc.) that is formedupon the respective surfaces of semiconductor package 20 and/orsemiconductor package 30 and prevents solder bridges from formingbetween closely spaced IO contacts. Solder mask 36 includes openings 37that expose the underlying IO contact. Solder 34 is populated within theopenings 37 and contacts the exposed IO contact. Solder 34 generally isa grid array type solder and generally electrically connects IO contactsof semiconductor package 20 with IO contacts of semiconductor package 30at the first interconnect level and generally electrically connects IOcontacts of semiconductor package 30 with IO contacts of anotherelectronic device at the second interconnect level.

At the first interconnect level, the solder 34 is generally C4(controlled collapse chip connection) type solder. At the secondinterconnect level, the solder 34 is generally micro BGA (ball gridarray) type solder balls. The term “micro BGA” is utilized herein todenote BGA solder balls of the micron scale which have a diameter ofapproximately 120 microns to 300 microns and are spaced at a pitch ofapproximately 200 microns to 800 microns. Generally, size of the secondinterconnect level solder 34 is greater than the size of the firstinterconnect level solder 34. For example, the space between thesemiconductor package 20 and semiconductor package 30 may beapproximately 10 to 100 microns and the space between the semiconductorpackage 30 and the other electronic device component connected theretomay be approximately 100 to 500 microns.

It is contemplated C4 type solder 34 be included upon contact 13 ofsemiconductor package 20 or upon contact 33 of semiconductor package 30.Micro BGA type solder 34 be included upon contact 33 of semiconductorpackage 30 or upon respective contacts of the other electronic device.Therefore, in embodiments, some IO contacts can be completely devoid ofany solder 34 and still be joined to IO contacts of anothersemiconductor package or electronic device.

FIG. 3-FIG. 5 depict cross section views of an exemplary multi terminalcapacitor 50 within an IO path of a multi semiconductor packageinterconnect, according to various embodiments of the present invention.For example, FIG. 3 depicts multi terminal capacitor 50 attached withinthe joint created by solder 34 which connects respective IO contacts 82of a lower semiconductor package 80 with respective IO contacts 72 of anupper semiconductor package 70. Similarly, FIG. 4 depicts multi terminalcapacitor 50 attached to at least two IO contacts 72 of an uppersemiconductor package 70 within an IO electrical pathway of aninterconnect level that electrically connects IO contacts 72 withrespective IO contacts 82 of a lower semiconductor package 80. FIG. 5depicts multi terminal capacitor 50 attached within an IO electricalpathway of an interconnect level that electrically connects IO contacts72 of an upper semiconductor package 70 with respective IO contacts 82of a lower semiconductor package 80.

Generally, upper semiconductor package 70 may be semiconductor package20 or semiconductor package 30. Lower semiconductor package 80 may,therefore, be semiconductor package 30 if upper semiconductor package 70is semiconductor package 20 or may be another electronic device if uppersemiconductor package 70 is semiconductor package 30. If solder 34 isassociated with the first interconnect level, the distance between theupper semiconductor package 70 and lower semiconductor package 80 issmaller than the distance between the upper semiconductor package 70 andlower semiconductor package 80 if solder 34 is associated with thesecond interconnect level. As such, the height of multi terminalcapacitor 50 may be larger if located in the second interconnect levelas opposed to multi terminal capacitor 50 being located in the firstinterconnect level. Consequently, the electrical potential of the multiterminal capacitor 50 within the second interconnect level may begreater than the electrical potential of the multi terminal capacitor 50within the first interconnect level.

The views of FIG. 3-FIG. 5 depict solder 34 subsequent to a solderreflow fabrication stage of a multi semiconductor package wherein solder34 is reflowed such that solder 34 wets to IO contact 72 and IO contact82 forming a bond between solder 34, IO contact 72, and IO contact 82.At least two IO pathways between upper semiconductor package 70 andlower semiconductor package 80 include multi terminal capacitor 50 and,as such, the associated solder 34 wets to IO contact 72, IO contact 82,and a terminal of multi terminal capacitor 50 forming a bond betweensolder 34, IO contact 72, IO contact 82, and a respective terminal ofmulti terminal capacitor 50.

FIG. 3 depicts an embodiment of the multi semiconductor package wherethe multi terminal capacitor 50 is connected directly to the solder 34of the IO path, bypassing the internal wiring of the lower semiconductorpackage 80 and the upper semiconductor package 70. The direct connectionof multi terminal capacitor 50 to the solder 34 eliminates inductionthat otherwise would exist from the internal wiring.

FIG. 4 depicts an embodiment of the multi semiconductor package where noinductance exists between the multi terminal capacitor 50 and IOcontacts 72 of upper semiconductor package 70 and between the multiterminal capacitor 50 and solder 34 which electrically connects uppersemiconductor package 70, lower semiconductor package 80, and multiterminal capacitor 50.

FIG. 5 depicts an embodiment of the multi semiconductor package where noinductance exists between the multi terminal capacitor 50 and solder 34which electrically connects upper semiconductor package 70, lowersemiconductor package 80, and multi terminal capacitor 50.

For clarity, no additional inductance is introduced in the multisemiconductor packages depicted in FIG. 3-FIG. 5 between the uppersemiconductor package 70 and lower semiconductor package 80 due to theaddition of multi terminal capacitor 50 within particular IO pathways.For example, the inductance between IO contacts 72 and IO contacts 82are the same. Further, no additional inductance is introduced in themulti semiconductor packages depicted in FIG. 3-FIG. 5 associated withan increased length of an electrical pathway of the upper semiconductorpackage 70 or the lower semiconductor package that connects anassociated IO contact to power or ground. In other words, an equivalentcircuit length between any of the IO contacts of the upper semiconductorpackage 70 and or lower semiconductor package 80 and power or ground isthe same whether or not multi terminal capacitor 50 is connected to theIO contact. For clarity, such equivalent circuit length does not changebecause multi terminal capacitor 50 is electrically connected within thefirst and/or second interconnect levels which allows the length of allof the electrical pathways within upper semiconductor package 70 and orlower semiconductor package 80 to stay constant whether or not multiterminal capacitor 50 is associated with the pathway.

FIG. 6-FIG. 8 depict normal views of exemplary multi terminal capacitors50 upon a semiconductor package, according to various embodiments of thepresent invention. For example, FIG. 6 depicts multi terminal capacitor50 attached to horizontally neighboring IO contacts of a semiconductorpackage, FIG. 7 depicts multi terminal capacitor 50 attached to diagonalneighboring IO contacts of a semiconductor package, and FIG. 8 depictsmulti terminal capacitor 50 attached to horizontally neighboring IOcontacts and to vertically neighboring IO contacts of a semiconductorpackage.

The term “neighboring IO contacts” is defined as directly adjacent IOcontacts with no intermediate IO contacts therebetween. For clarity, theorientation of the semiconductor package depicted in FIG. 6 may be suchthat terminal capacitor 50 is attached to vertically neighboring IOcontacts of the semiconductor package. Generally, neighboring IOcontacts each separately located in different columns or rows of the IOcontact array are of opposite polarity. In other words, successive rowsor columns of IO contacts are each associated with an alternatingpositive and negative polarity. For example, in FIG. 6, the bottom rowof IO contacts may be associated with a positive polarity, the middlerow of IO contacts is then associated with a negative polarity, and thetop row of IO contacts is then associated with a positive polarity.

Due to multi terminal capacitor 50 being electrically connected withinthe first and/or second interconnect levels and by and within solder 34,particular solder 34 of the solder array need not be depopulated inparticular opening 37 locations from the solder mask 36 associated withwhere multi terminal capacitor 50 are or are to be placed. In otherwords, the entire solder 34 grid array may stay intact as opposed toparticular locations of solder 34 needing to be removed in locationswhere multi terminal capacitor 50 is or is to be placed.

FIG. 9 depicts a normal view of an exemplary semiconductor packagesolder mask 36 and IO contacts exposed by arrayed openings 37 within thesolder mask 36. In an embodiment, solder mask 36 opening 37 includescapacitor tab 40. The term “capacitor tab” is defined as an extension ofan associated opening 37 that directionally extends toward a neighboringextension of a neighboring opening 37 such that the extension increasesthe exposed area of an IO contact that is exposed by associated opening37. For example, capacitor tab 40 of the left opening 37 directionally(i.e., horizontally) extends toward capacitor tab 40 of the neighboringright opening 37, and vice versa, as depicted in FIG. 9. The term“neighboring openings” is defined as directly adjacent openings 37within solder mask 36 with no intermediate openings 37 therebetween.

FIG. 10 depicts a normal view of an exemplary multi terminal capacitor50 upon exposed IO contacts of a semiconductor package. In anembodiment, each terminal of the multi terminal capacitor 50 generallycontacts an IO contact exposed via opening 37 of solder mask 36 withinthe boundary of a respective capacitor tab 40. For example, a leftterminal of multi terminal capacitor 50 contacts the IO contact exposedby capacitor tab 40 of the left opening 37 and a right terminal of multiterminal capacitor 50 contacts the IO contact exposed by capacitor tab40 of the right opening 37. The increase of exposed area of the IOcontact by the capacitor tab 40 allows requisite area for a terminal ofthe multi terminal capacitor 50 to electrically connect with the IOcontact (via a particular reflowed solder 34) while also allowing thearea of the IO contact exposed by opening 37 to be maintained so as tonot degrade IO signal characteristics associated therewith.

FIG. 11 depicts a normal view of an exemplary semiconductor packagesolder mask 36 and IO contacts exposed by openings 37 within the soldermask 36. In an embodiment, at least two solder mask 36 openings 37include one respective capacitor tab 40 and one solder mask 36 opening37 includes two capacitor tabs 40. For example, a left and right opening37 each respectively includes one capacitor tab 40 and a middle opening37 includes a left capacitor tab 40 and a right capacitor tab 40. Themultiple capacitor tabs 40 are arranged such that the capacitor tab 40of the left opening 37 directionally (i.e., horizontally) extends towardthe left capacitor tab 40 of the neighboring middle opening 37, and viceversa, and such that the capacitor tab 40 of the right opening 37directionally (i.e., horizontally) extends toward the right capacitortab 40 of the neighboring middle opening 37, and vice versa.

FIG. 12 depicts a normal view of multiple exemplary multi terminalcapacitors 50 upon exposed IO contacts of a semiconductor package. In anembodiment, each terminal of the multi terminal capacitor 50 generallycontacts an IO contact exposed via opening 37 of solder mask 36 withinthe boundary of a respective capacitor tab 40. For example, a leftterminal of a first multi terminal capacitor 50 contacts the IO contactexposed by capacitor tab 40 of the left opening 37 and a right terminalof the first multi terminal capacitor 50 contacts the IO contact exposedby the left capacitor tab 40 of the middle opening 37. Likewise, a leftterminal of a second multi terminal capacitor 50 contacts the IO contactexposed by right capacitor tab 40 of the middle opening 37 and a rightterminal of the second multi terminal capacitor 50 contacts the IOcontact exposed by the capacitor tab 40 of the right opening 37. Theincrease of exposed area of the IO contact by the one or more capacitortab(s) 40 allows requisite area for a terminal of the multi terminalcapacitor 50 to electrically connect with the IO contact (via aparticular reflowed solder 34) while also allowing the area of the IOcontact exposed by opening 37 to be maintained so as to not degrade IOsignal characteristics associated therewith.

FIG. 13 depicts a normal view of an exemplary semiconductor packagesolder mask 36 and IO contacts exposed by openings 37 within the soldermask 36. In an embodiment, solder mask 36 opening 37 includes capacitortab 40 and signal tab 41. The term “signal tab” is defined as anextension of an associated opening 37 that extends in an oppositedirection from the capacitor tab 40 of the associated opening 37 suchthat the extension increases the exposed area of an IO contact that isexposed by the associated opening 37. For example, signal tab 41 of theleft opening 37 directionally (i.e., horizontally) extends away fromcapacitor tab 40 of the left opening 37 such that signal tab 41 extendsin a direction 180° from direction of capacitor tab 40 of the leftopening 37. Likewise, signal tab 41 of the right opening 37directionally (i.e., horizontally) extends away from capacitor tab 40 ofthe right opening 37 such that signal tab 41 extends in a direction 180°from direction of capacitor tab 40 of the right opening 37.

FIG. 14 depicts a normal view of an exemplary multi terminal capacitor50 upon exposed IO contacts of a semiconductor package. In anembodiment, each terminal of the multi terminal capacitor 50 generallycontacts an IO contact exposed via opening 37 of solder mask 36 withinthe boundary of a respective capacitor tab 40. For example, a leftterminal of multi terminal capacitor 50 contacts the IO contact exposedby capacitor tab 40 of the left opening 37 and a right terminal of multiterminal capacitor 50 contacts the IO contact exposed by capacitor tab40 of the right opening 37. The increase of exposed area of the IOcontact by the capacitor tab 40 allows requisite area for a terminal ofthe multi terminal capacitor 50 to electrically connect with the IOcontact (via a particular reflowed solder 34) while the increase ofexposed area of the IO contact by the signal tab 41 allows requisitearea of the IO contact to be maintained so as to not degrade IO signalcharacteristics associated therewith. In other words, solder 34 wets tothe IO contact within the area of opening 37 and within the area ofsignal tab 41 so as to obtain a sufficient area of electrical connectionbetween the solder 34 and the IO contact so as to achieve sufficient IOsignal characteristics associated therewith.

For clarity, some openings 37 of solder mask 36 may include one or morecapacitor tabs 40 and one or more signal tabs 41 while other openings 37may not include any capacitor tabs 40 and any signal tabs 41.

FIG. 15 depicts a cross section view of an exemplary semiconductorpackage solder mask 36 and IO contacts exposed by openings 37 within thesolder mask 36. In an embodiment, a portion of the solder mask 36 may beremoved between neighboring openings 37. For example, the portion of thesolder mask 36 may be removed between neighboring openings 37 by laserablation or other known technique such that a top surface 54 of soldermask 36 between neighboring openings 37 is below a major top surface 53of solder mask 36. The term “major top surface” is defined as the topsurface of the majority of the solder mask 36. The dimensions of adepression formed by the removal of solder mask 36 material betweenneighboring openings 37 may be such that the multi terminal capacitor 50fits within the depression while allowing the terminals of the multiterminal capacitor 50 to be electrically connected to respective IOcontacts via reflowed solder 34. In an embodiment, as is depicted, topsurface 54 is above a top surface of one or more IO contacts. In otherembodiments, top surface 54 is coplanar with the top surface of one ormore IO contacts. In other embodiments, top surface 54 is below the topsurface of one or more IO contacts.

FIG. 16 depicts a cross section view of an exemplary multi terminalcapacitor 50 upon exposed IO contacts of a semiconductor package. In anembodiment, the multi terminal capacitor 50 may be mechanically attachedto the semiconductor package via adhesive 60. In a particularimplementation, the adhesive 60 may be arranged so as to be betweenmulti terminal capacitor 50 and surface 54 of solder mask 36, as isshown in FIG. 16. In another implementation, the adhesive 60 may bearranged so as to be between one or more terminals of multi terminalcapacitor 50 and respective IO contact(s). In an embodiment, as isdepicted, top surface of adhesive 60 is above a top surface of one ormore IO contacts. In other embodiments, top surface of adhesive 60 iscoplanar with the top surface of one or more IO contacts.

In some embodiments, the multi terminal capacitor 50 may prevent solder34 from bridging between neighboring IO contacts during solder 34reflow. Post solder 34 reflow, solder 34 electrically connects aterminal 52 of multi terminal capacitor 50 with an IO contact of a firstsemiconductor package and an IO contact of a second semiconductorpackage (not shown). For example, the reflowed solder 34 wets to sidesurfaces of terminal 52 of the multi terminal capacitor 50, an adjacentIO contact of the first semiconductor package, and an aligned IO contactof the second semiconductor package. In a particular implementation, asis shown in FIG. 16, the bottom surface is directly connected to theadjacent IO contact. As a result, post solder 34 reflow, there is noinductance between the terminal 52 and solder 34, no inductance betweenterminal 52 and the adjacent IO contact of the first semiconductorpackage, and no inductance between solder 34 and the aligned IO contactof the second semiconductor package. In an embodiment, the topperspective view and side perspective view of multi terminal capacitor50 is generally rectangular. As such, terminals 52 need not protrudefrom the body of the capacitor 50. Generally, terminal 52 multi terminalcapacitor 50 are the features of the capacitor that electricallyconnects to one or more internal plates of the multi terminal capacitor50 and provides a surface to make electrical connection between anotherdiscreet electrical component and the multi terminal capacitor 50. Forexample, a first terminal 52 of multi terminal capacitor 50 electricallyconnects to one or more first sets of internal plates of the multiterminal capacitor 50 and a second terminal 52 of multi terminalcapacitor 50 electrically connects to one or more second sets ofinternal plates of the multi terminal capacitor 50, such that acapacitance is formed across the first sets of internal plates and thesecond sets of internal plates when current flows between the first andsecond terminals.

FIG. 17 depicts a cross section view of an exemplary semiconductor chipsystem 100 of an electronic device such as a computer, server, mobiledevice, tablet, etc. which includes a multi terminal capacitor 50 withinan IO path of a multi semiconductor package interconnect. Semiconductorchip system 100 includes multiple semiconductor packages. For example,chip system 100 includes a semiconductor chip 102, chip carrier 108,carrier interposer 120, and motherboard 130. Semiconductor chip 102 maybe a processor, integrated circuit, semiconductor chip, microchip or thelike. Chip carrier 108 may be an organic or inorganic carrier,interposer, or the like that is electrically connected to semiconductorchip 102 via interconnects 122. Carrier interposer 120 may be an organicor inorganic carrier, interposer, or the like that is electricallyconnected to chip carrier 108 via interconnects 114. Motherboard 130 maybe a system board, printed circuit board, or the like that iselectrically connected to carrier interposer 120 via interconnects 126.

Chip carrier 108 provides mechanical support for the semiconductor chip102 and electrical paths from IO contacts upon the upper surface ofcarrier 108 to IO contacts on the opposing side of carrier 108. Carrierinterposer 120 provides mechanical support for the chip carrier 108 andelectrical paths from IO contacts on the upper surface of carrierinterposer 120 to IO contacts on the opposing side of carrier interposer120.

Interconnects 122 connect semiconductor chip 102 to the upper side ofchip carrier 108 and may be a C4 type solder array, or the like thatelectrically connect semiconductor chip 102 to IO contact array upon thetop side of chip carrier 108 subsequent to a solder reflow. A multiterminal capacitor 50 may be located within the first interconnect level(e.g., directly upon semiconductor chip 102 or the top side of chipcarrier 108). If located upon the chip carrier 108, the reflowed solderalso electrically connects a terminal of the multi terminal capacitor 50to an IO contact of the chip carrier 108. If located upon semiconductorchip 102, the reflowed solder also electrically connects a terminal ofthe multi terminal capacitor 50 to an IO contact of the semiconductorchip. In this manner, the terminal capacitor 50 is within an IO path ofan interconnect 122. The terminal of the multi terminal capacitor 50 iselectrically connected within the IO path such that there is noinductance between the terminal and an IO contact of either thesemiconductor chip 102 or chip carrier 108 and between the terminal andthe reflowed solder.

Underfill 110 may be electrically-insulating and may substantiallysurround interconnects 122, thereby electrically isolating individualinterconnects, and may provide mechanical support between the associatedsemiconductor chip 102 and chip carrier 108. Underfill 110 may alsoprevent damage to individual interconnects 122 due to thermal expansionmismatches between the semiconductor chip 102 and chip carrier 108. Alid 116 may be attached to semiconductor chip 102 with an interfacematerial 112 and to chip carrier 108 with a seal band 120.

The seal band 120 may be applied to the chip carrier 108 around theperimeter of the semiconductor chip 102. During operation of theelectronic device, heat may need to be removed from semiconductor chip102. In this situation, lid 116 may be both a cover and a conduit forheat transfer. As such, a thermal interface material (TIM) may thermallyjoin lid 116 and semiconductor chip 102. TIM may be a thermal grease,gel, or other similar compliant heat transferring material and may beapplied upon semiconductor chip 102 or upon aligned locations on theunderside of cover 116.

At the second interconnect level, interconnects 114 are micro BGA typesolder balls. Generally, size of interconnects 114 are greater than thesize of interconnects 122, and as such, the size of multiple capacitor50 in the second interconnect level may be larger than the size of anymultiple capacitor 50.

Interconnects 122 connect chip carrier 108 to the upper side of carrierinterposer 120 and electrically connect IO contacts upon the bottom sideof carrier 108 with IO contacts upon the top side of carrier interposer120 subsequent to a solder reflow. A multi terminal capacitor 50 may belocated within the second interconnect level (e.g., directly upon theunderside of chip carrier 108 or the top side of carrier interposer120). If located upon the underside of chip carrier 108, the reflowedsolder also electrically connects a terminal of the multi terminalcapacitor 50 to an IO contact of the chip carrier 108. If located uponcarrier interposer 120, the reflowed solder also electrically connects aterminal of the multi terminal capacitor 50 to an IO contact of thecarrier interposer 120. In this manner, the terminal capacitor 50 iswithin an IO path of an interconnect 114. The terminal of the multiterminal capacitor 50 is electrically connected within the IO path suchthat there is no inductance between the terminal and an IO contact ofeither the carrier interposer 120 or chip carrier 108 and between theterminal and the reflowed solder.

Carrier interposer 120 is connected to motherboard 130 via interconnects126. Interconnects 123 may be a pin array located upon motherboard 130or may be a pin array located upon carrier interposer 120. In otherembodiments, interconnects 126 may be a wire bond, solder bond, stud,pin, conductive ball, conductive button, etc.

For clarity, one or more multi terminal capacitor(s) 50 may be locatedwithin the first interconnect level and/or one or more multi terminalcapacitor(s) 50 may be located within the second interconnect level.

FIG. 18 depicts an exemplary semiconductor package fabrication method200. Method 200 may be utilized to fabricate a first semiconductorpackage in the form of a wafer. Method 200 begins at block 202 andcontinues with forming a solder mask 36 comprising a plurality ofopenings 37 therewithin upon a wafer comprising a plurality of IOcontacts such that respective openings 37 expose respective IO contacts(block 204).

Method 206 may continue with attaching a multi terminal capacitor 50upon the solder mask 36 between neighboring IO contacts such that afirst terminal 52 contacts a first IO contact and a second terminal 52contacts a second IO contact which neighbors the first IO contact (block206). For example, the multi terminal capacitor 50 may be attached tothe wafer by an adhesive. In some embodiments, method 200 may alsoinclude forming solder 34 upon the exposed IO contacts. A first solder34 may be located upon the first IO contact adjacent to the firstterminal 52 and a second solder 24 may be located upon the second IOcontact adjacent to the second terminal 52. Method 200 may continue withdicing the wafer (block 208) and ends at block 210.

FIG. 19 depicts an exemplary semiconductor package fabrication method220. Method 220 may be utilized to fabricate a semiconductor chipcarrier 108. Method 220 begins at block 222 and continues with forming asolder mask 36 comprising a plurality of openings 37 therewithin upon asemiconductor chip carrier 108 comprising a plurality of IO contactssuch that respective openings 37 expose respective IO contacts (block24).

Method 220 may continue with forming a capacitor trench by partiallyremoving solder mask 36 material between neighboring IO contacts (block226). For example, the portion of the solder mask 36 may be removedbetween neighboring openings 37 by laser ablation or other knowntechnique such that a top surface 54 of solder mask 36 betweenneighboring openings 37 is below a major top surface 52 of solder mask36. The dimensions of a trench formed by the removal of solder mask 36material between neighboring openings 37 may be such that the multiterminal capacitor 50 fits within the trench.

Method 220 may continue with attaching multi terminal capacitor 50 uponsolder mask 36 between neighboring IO contacts such that a firstterminal 52 contacts a first IO contact and a second terminal 52contacts a second IO contact which neighbors the first IO contact (block228). For example, the multi terminal capacitor 50 may be mechanicallyattached to solder mask 36 within the trench (block 230) via adhesive60. In a particular implementation, the adhesive 60 may be arranged soas to be between multi terminal capacitor 50 and surface 54 of soldermask 36. In another implementation, the adhesive 60 may be arranged soas to be between one or more terminals 52 of multi terminal capacitor 50and respective IO contact(s).

In some embodiments, method 220 may also include forming solder 34 uponthe exposed IO contacts. For example, a first solder 34 may be locatedupon the first IO contact adjacent to the first terminal 52 and a secondsolder 24 may be located upon the second IO contact adjacent to thesecond terminal 52. Method 220 ends at block 232.

FIG. 20 depicts an exemplary semiconductor package fabrication method240. Method 240 may be utilized to fabricate solder mask 36. Method 240begins at block 222 and continues with fabricating a solder mask 36 upona semiconductor package (block 244). For example, the solder mask 36 maybe formed upon a wafer, semiconductor chip 102, semiconductor chipcarrier 108, or the like.

Method 240 may continue with forming an array of openings 37 withinsolder mask 36 to expose respective IO contacts of the semiconductorpackage (block 246). For example, a solder mask 36 may be positivelyapplied on only particular locations of the semiconductor package suchthat openings 37 exist within the mask 36 utilizing positive depositiontechniques. In other example, a solder mask 36 may be applied andportions of the solder mask 36 may be removed to form openings 37utilizing subtractive (e.g. etching, etc.) fabrication techniques.

Method 240 may continue with forming respective capacitor tabs 40associated with neighboring openings 37 such that the capacitor tabs 40directionally extend toward one another (block 248). Method 240 mayfurther include forming a signal tab 41 associated with opening 37 suchthat the signal tab 41 extends in an opposite direction from thecapacitor tab 40 of the opening 37. Method 240 ends at block 250.

FIG. 20 depicts an exemplary semiconductor package fabrication method260. Method 260 may be utilized to fabricate a multi semiconductorpackage. For example, method 260 may be utilized to fabricate asemiconductor chip 102 and chip carrier 108 package or a chip carrier108 and carrier interposer 120 package. Method 260 begins at block 262and continues with placing solder 34 within an opening 37 and upon an IOcontact of a first semiconductor package adjacent to a terminal 52 of amulti terminal capacitor 50 (block 264).

Method 260 may continue with aligning the IO contact of the firstsemiconductor package with an IO contact of a second semiconductorpackage against solder 34 (block 266). Method 260 may continue withreflowing solder 34 to electrically connect the first semiconductorpackage with the second conductor package (block 268). Further, thereflowed solder also electrically connects the terminal 52 with an IOcontact (block 270). No additional inductance is introduced in the multisemiconductor package of method 260 due to the addition of multiterminal capacitor 50 within the solder 34 IO pathway. For example, theinductance between IO contacts of the first package and the IO contactsof the second package are the same whether or not the multi terminalcapacitor 50 is therein. Further, there is no inductance between theterminal 52 of multi terminal capacitor 50 and the IO contact and thereis no inductance between terminal 52 and solder 34. Method 260 ends atblock 272.

The accompanying figures and this description depicted and describedembodiments of the present invention, and features and componentsthereof. Those skilled in the art will appreciate that any particularnomenclature used in this description was merely for convenience, andthus the invention should not be limited by the specific processidentified and/or implied by such nomenclature. Therefore, it is desiredthat the embodiments described herein be considered in all respects asillustrative, not restrictive, and that reference be made to theappended claims for determining the scope of the invention.

The exemplary methods and techniques described herein may be used in thefabrication of integrated circuit chips. The resulting integratedcircuit chips can be distributed by the fabricator in raw wafer form(i.e., as a single wafer that has multiple unpackaged chips), as a baredie, or in a packaged form. In the latter case, the chip is mounted in asingle chip package (e.g., a carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(e.g., a carrier that has either or both surface interconnections orburied interconnections). The chip is then integrated with other chips,discrete circuit elements and/or other signal processing devices as partof either (a) an intermediate product, such as a motherboard, or (b) anend product. The end product can be any product that includes integratedcircuit chips, ranging from toys and other low-end applications toadvanced computer products having numerous components, such as adisplay, a keyboard or other input device and/or a central processor, asnon-limiting examples.

References herein to terms such as “vertical”, “horizontal”, etc. aremade by way of example, and not by way of limitation, to establish aframe of reference. The term “horizontal” as used herein is defined as aplane parallel to the conventional plane or surface of mother board 130,regardless of the actual spatial orientation of the mother board 130.The term “vertical” refers to a direction perpendicular to thehorizontal, as just defined. Terms, such as “on”, “above”, “below”,“side” (as in “sidewall”), “higher”, “lower”, “over”, “beneath” and“under”, are defined with respect to the horizontal plane. It isunderstood that various other frames of reference may be employed fordescribing the present invention without departing from the spirit andscope of the present invention.

What is claimed is:
 1. A semiconductor device fabrication methodcomprising: attaching a multi terminal capacitor to neighboring IOcontacts of a semiconductor chip carrier such that a first terminalcontacts a first IO contact and a second terminal contacts a second IOcontact; and interconnecting the semiconductor chip carrier with acarrier interposer with solder interconnects such that a first solderinterconnect directly contacts the first terminal and the first IOcontact and a second solder interconnect directly contacts the secondterminal and the second IO contact.
 2. The semiconductor devicefabrication method of claim 1, wherein there is no inductance betweenthe first solder interconnect and the first terminal and between thefirst solder interconnect and the first IO contact.
 3. The semiconductordevice fabrication method of claim 1, further comprising: placing thefirst solder interconnect upon the first IO contact; and placing thesecond solder interconnect upon the second IO contact.
 4. Thesemiconductor device fabrication method of claim 1, further comprising:reflowing the solder interconnects.
 5. The semiconductor devicefabrication method of claim 1, wherein the multi terminal capacitor isattached to an underside of the chip carrier.
 6. The semiconductordevice fabrication method of claim 1, wherein the first IO contact andthe second IO contact are horizontally neighboring IO contacts.
 7. Thesemiconductor device fabrication method of claim 1, wherein the first IOcontact and the second IO contact are vertically neighboring IOcontacts.
 8. The semiconductor device fabrication method of claim 1,wherein the first IO contact and the second IO contact are diagonalneighboring IO contacts.
 9. The semiconductor device fabrication methodof claim 1, wherein the first IO contact and the second IO contact arevertically neighboring IO contacts.
 10. The semiconductor devicefabrication method of claim 1, wherein the first IO contact and thesecond IO contact are diagonal neighboring IO contacts.
 11. Asemiconductor device fabrication method comprising: attaching a multiterminal capacitor to neighboring IO contacts of a carrier interposersuch that a first terminal contacts a first IO contact and a secondterminal contacts a second IO contact; and interconnecting the carrierinterposer with a semiconductor chip carrier with solder interconnectssuch that a first solder interconnect directly contacts the firstterminal and the first IO contact and a second solder interconnectdirectly contacts the second terminal and the second IO contact.
 12. Thesemiconductor device fabrication method of claim 11, wherein there is noinductance between the first solder interconnect and the first terminaland between the first solder interconnect and the first IO contact. 13.The semiconductor device fabrication method of claim 11, furthercomprising: placing the first solder interconnect upon the first IOcontact; and placing the second solder interconnect and upon the secondIO contact.
 14. The semiconductor device fabrication method of claim 11,further comprising: reflowing the solder interconnects.
 15. Thesemiconductor device fabrication method of claim 11, wherein the multiterminal capacitor is attached to a topside of the carrier interposer.16. The semiconductor device fabrication method of claim 11, wherein thefirst IO contact and the second IO contact are horizontally neighboringIO contacts.